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Abstract Herein, the significant impact of the spin‐coated Cr₂O₃interface layer on the electrical properties and performance characteristics of Au/undoped‐InP (Au/InP) Schottky diodes (SD) is reported. The material characterization of spin‐coated Cr₂O₃films using a wide variety of analytical techniques, namely, atomic force microscopy, field emission scanning electron microscope, X‐ray diffraction, Fourier transform infrared spectroscopy, and Raman spectroscopy, indicate the formation of hexagonal phase, nanocrystalline, and stoichiometric Cr₂O₃on InP. Optical absorption measurements reveal a bandgap of ≈3.5 eV. In‐depth analyses and detailed measurements of current‐voltage (I–V) and capacitance‐voltage (C‐V) employed to assess the interface characteristics and electrical performance of the Au/InP (SD) versus Au/Cr₂O₃/InP (MIS) devices. Compared to SD, MIS revealed superior rectifying properties. Indicating that the Cr₂O₃interface layer significantly influences the barrier height (Φ_BH) of SD, the estimated Φ_BH(0.64 eV (I–V)/0.86 eV (C‐V)) is higher than that of SD (0.57 eV (I–V)/0.67 eV (C‐V)). In addition, Cheungs and Nordes' methods are used to obtain the Φ_BH, ideality factor (n), and series resistance (R_S). The equivalent Φ_BHvalues obtained from current–voltage, Cheungs, and Nordes methods demonstrate stability and dependability in addition to validating their superior characteristics of MIS devices. The interface state density (N_SS) for MIS is lower than the SD's, indicating that the effectiveness of Cr₂O₃layer significantly reduces N_SS. Analyses to probe the mechanism demonstrate that, in SD and MIS, the Schottky emission controls the higher bias area, while the Poole‐Frenkel emission dominates the reverse conduction mechanism at the lower bias region. The present work convincingly demonstrates the potential application of the Cr₂O₃interfacial layer in delivering the enhanced performance and contributes to the progression of electrical devices for emerging electronics and energy‐related applications. 

Abstract For the sustainable growth of future generations, energy storage technologies like supercapacitors and batteries are becoming more and more common. However, reliable and high‐performance materials’ design and development is the key for the widespread adoption of batteries and supercapacitors. Quantum dots with fascinating and unusual properties are expected to revolutionize future technologies. However, while the recent discovery of quantum dots honored with a Nobel prize in Chemistry, their benefits for the tenacious problem of energy are not realized yet. In this context, herein, chemical‐composition tuning enabled exceptional performance of NiCo₂O₄(NCO)/graphene quantum dots (GQDs) is reported, which outperform the existing similar materials, in supercapacitors. A comprehensive study is performed on the synthesis, characterization, and electrochemical performance evaluation of highly functional NCO/GQDs in supercapacitors delivering enhanced energy efficiency. The high‐performance, functional NCO/GQDs electrode materials are synthesized by the incorporation of GQDs into NCO. The effect of variable amount of GQDs on the energy performance characteristics of NCO/GQDs in supercapacitors is studied systematically. In‐depth structural and chemical bonding analyses using X‐ray diffraction (XRD) and Raman spectroscopic studies indicate that all the NCO/GQDs composites crystallize in the spinel cubic phase of NiCo₂O₄while graphene integration evident in all the NCO/GQDs. The scanning electron microscopy imaging analysis reveals homogeneously distributed spherical particles with a size distribution of 5–9 nm validating the formation of QDs. The high‐resolution transmission electron microscopy analyses reveal that the NCOQDs are anchored on graphene sheets, which provide a high surface area of 42.27 m²g⁻¹and high mesoporosity for the composition of NCO/GQDs‐10%. In addition to establishing reliable electrical connection to graphene sheets, the NCOQDs provide reliable 3D‐conductive channels for rapid transport throughout the electrode as well as synergistic effects. Chemical‐composition tuning, and optimization yields NCO/GQDs‐10% to deliver the best specific capacitance of 3940 Fg⁻¹at 0.5 Ag⁻¹, where the electrodes retain ≈98% capacitance after 5000 cycles. The NCO/GQD‐10%//AC asymmetric supercapacitor device demonstrates outstanding energy density and power density values of 118.04 Wh kg⁻¹and 798.76 W kg⁻¹, respectively. The NCO/GQDs‐10%//NCO/GQDs‐10% symmetric supercapacitor device delivers excellent energy and power density of 24.30 Wh kg⁻¹and 500 W kg⁻¹, respectively. These results demonstrate and conclude that NCO/GQDs are exceptional and prospective candidates for developing next‐generation high‐performance and sustainable energy storage devices. 

Abstract With the astonishing advancement of present technology and increasing energy consumption, there is an ever‐increasing demand for energy‐efficient multifunctional sensors or transducers based on low‐cost, eco‐friendly material systems. In this context, self‐assembled vertically alignedβ‐Ga_2−xW_xO₃nanocomposite (GWO‐VAN) architecture‐assisted self‐biased solar‐blind UV photodetection on a silicon platform, which is the heart of traditional electronics is presented. Utilizing precisely controlled growth parameters, the formation of W‐enriched verticalβ‐Ga_2−xW_xO₃nanocolumns embedded into the W‐deficientβ‐Ga_2−xW_xO₃matrix is reached. Detailed structural and morphological analyses evidently confirm the presence ofβ‐Ga_2−xW_xO₃nanocomposite with a high structural and chemical quality. Furthermore, absorption and photoluminescence spectroscopy explains photo‐absorption dynamics and the recombination through possible donor–acceptor energy states. The proposed GWO‐VAN framework facilitates evenly dispersed nanoregions with asymmetric donor energy state distribution and thus forms build‐in potential at the verticalβ‐Ga_2−xW_xO₃interfaces. As a result, the overall heterostructure evinces photovoltaic nature under the UV irradiation. A responsivity of ≈30 A/W is observed with an ultrafast response time (≈350 µs) under transient triggering conditions. Corresponding detectivity and external quantum efficiency are 7.9 × 10¹²Jones and 1.4 × 10⁴%, respectively. It is believed that, while this is the first report exploiting GWO‐VAN architecture to manifest self‐biased solar‐blind UV photodetection, the implication of the approach is enormous in designing electronics for extreme environment functionality and has immense potential to demonstrate drastic improvement in low‐cost UV photodetector technology. 

The authors report on the evaluation of the oxide scale and the interface microstructure of a Cr–Nb–Ta–V–W refractory high entropy alloy (HEA) at elevated temperatures. The Cr–Nb–Ta–V–W HEA is oxidized at 700 and 800 °C in lab air and the substrate/oxide interface is investigated. Combined in situ X‐ray diffraction (XRD) coupled with ex situ scanning electron microscopy (SEM) and energy dispersive X‐ray spectrometry (EDS) analyses characterize the oxide scale and confirm the phases present in the substrate which have been previously identified in this alloy. The microstructure near the interface is studied for an indication of selective oxidation of this alloy. Cracking and porosity are found along the interface layer which grows directionally outward. Two main oxides are identified: a W‐based oxide with a needle‐like structure and a Cr oxide containing Ta that has a granular structure, primarily found in clusters. The oxide layers are porous, and no dense protective oxide is identified. It is found that when the temperature is increased to 800 °C, the oxide layer exhibits an increase in thickness. In situ XRD indicates that V is the first element to oxidize. 

Abstract The enhanced safety, superior energy, and power density of rechargeable metal‐air batteries make them ideal energy storage systems for application in energy grids and electric vehicles. However, the absence of a cost‐effective and stable bifunctional catalyst that can replace expensive platinum (Pt)‐based catalyst to promote oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) at the air cathode hinders their broader adaptation. Here, it is demonstrated that Tin (Sn) doped β‐gallium oxide (β‐Ga₂O₃) in the bulk form can efficiently catalyze ORR and OER and, hence, be applied as the cathode in Zn‐air batteries. The Sn‐doped β‐Ga₂O₃sample with 15% Sn (Sn_x=0.15‐Ga₂O₃) displayed exceptional catalytic activity for a bulk, non‐noble metal‐based catalyst. When used as a cathode, the excellent electrocatalytic bifunctional activity of Sn_x=0.15‐Ga₂O₃leads to a prototype Zn‐air battery with a high‐power density of 138 mW cm⁻²and improved cycling stability compared to devices with benchmark Pt‐based cathode. The combined experimental and theoretical exploration revealed that the Lewis acid sites in β‐Ga₂O₃aid in regulating the electron density distribution on the Sn‐doped sites, optimize the adsorption energies of reaction intermediates, and facilitate the formation of critical reaction intermediate (O*), leading to enhanced electrocatalytic activity.